CHA2066RBF

Features:

Broad band performance: 10-16GHz
Gain = 15dB (typical)
Noise Figure 2.0dB (typical)
Output power (P_-1dB) 13dBm (typical)
Return loss < -6dB
SMD leadless package
Dimensions: 5.08 x 5.08 x 0.97 mm³


Specifications

Symbol	Parameter (1)	Values	Unit
Vd	Drain bias voltage	4.5	V
Pin	Maximum peak input power overdrive (2)	+15	dBm
Top	Operating temperature range (3)	-40 to +85
Tstg	Storage temperature range	-55 to +125

V


Description

CHA2066RBF monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier.

CHA2066RBF MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2066RBF is supplied in a new SMD leadless chip carrier.