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CHA2069

Features: · Broad band performance 18-31GHz· 2.5dB noise figure· 22dB gain, ± 1dB gain flatness· Low DC power consumption, 55mA· 20dBm 3rd order intercept point· Chip size : 2,170 x 1,270x 0.1mmSpecifications Symbol Parameter Values Unit Vd Drain bias voltage (5) 5.0 V Pin Maximu...

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SeekIC No. : 004313363 Detail

CHA2069: Features: · Broad band performance 18-31GHz· 2.5dB noise figure· 22dB gain, ± 1dB gain flatness· Low DC power consumption, 55mA· 20dBm 3rd order intercept point· Chip size : 2,170 x 1,270x 0.1mmSpec...

CHA2069 Data Sheet

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Part Number:
CHA2069
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Broad band performance 18-31GHz
· 2.5dB noise figure
· 22dB gain, ± 1dB gain flatness
· Low DC power consumption, 55mA
· 20dBm 3rd order intercept point
· Chip size : 2,170 x 1,270x 0.1mm


Specifications

Symbol Parameter Values Unit
Vd Drain bias voltage (5) 5.0 V
Pin Maximum peak input power overdrive (4) +15 dBm
Top Operating temperature range -40 to +85
Tstg Storage temperature range -55 to +125



Description

CHA2069 is a three-stage self biased wide band monolithic low noise amplifier.

CHA2069 is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2069 is supplied in chip form.



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