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CHA2069-QDG

Features: · Broadband performance 18-30GHz· 3dB noise figure· 20dB gain· 65 mA Low DC power consumption.· 20dBm 3rd order intercept point (high current configuration).· 24L-QFN4x4 SMD packagSpecifications Symbol Parameter Values Unit Vd Drain bias voltage 5 V Pin Maximum in...

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CHA2069-QDG: Features: · Broadband performance 18-30GHz· 3dB noise figure· 20dB gain· 65 mA Low DC power consumption.· 20dBm 3rd order intercept point (high current configuration).· 24L-QFN4x4 SMD packagSp...

CHA2069-QDG Data Sheet

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Part Number:
CHA2069-QDG
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

· Broadband performance 18-30GHz
· 3dB noise figure
· 20dB gain
· 65 mA Low DC power consumption.
· 20dBm 3rd order intercept point (high current
   configuration).
· 24L-QFN4x4 SMD packag


Specifications

Symbol Parameter Values Unit
Vd Drain bias voltage 5 V
Pin Maximum input power overdrive -7 dBm
Rth_BDE Thermal Resistance channel to ground paddle 130 °C/W
Rth_BCF Thermal Resistance channel to ground paddle 120 °C/W
Top Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +125 °C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Thermal resistance for Tamb. = +85°C and a Tj max = +175°C.


Description

The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multipoint, VSAT) to ISM and military markets.

CHA2069-QDG is manufactured with a standard pHEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2069-QDG is supplied in lead-free SMD package




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