CHA2069RAF

Features:

·Broad band performance: 18-31GHz
·Gain = 21dB (typical)
·Noise Figure 3.0 dB (typical for f<26GHz)
·Return loss < -6dB
·SMD leadless package
·Dimensions: 5.08 x 5.08 x 0.97 mm³


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	5.0	V
Pin	Maximum peak input power overdrive (2)	+15	dBm
Top	Operating temperature range (3)	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier.

CHA2069RAF MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2069RAF is supplied in a new SMD leadless chip carrier.