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CHA2090

Features: ·Broadband performance 17-24GHz·2.0dB noise figure·23dB gain, ± 1dB gain flatness·Low DC power consumption, 55mA·Chip size : 2,170 x 1,270x 0.1mmSpecifications Symbol Parameter Values Unit Vd Drain bias voltage (3) 5.5 V Pin Maximum peak input power overdrive (2) +15 ...

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SeekIC No. : 004313366 Detail

CHA2090: Features: ·Broadband performance 17-24GHz·2.0dB noise figure·23dB gain, ± 1dB gain flatness·Low DC power consumption, 55mA·Chip size : 2,170 x 1,270x 0.1mmSpecifications Symbol Parameter Valu...

CHA2090 Data Sheet

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Part Number:
CHA2090
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Broadband performance 17-24GHz
·2.0dB noise figure
·23dB gain, ± 1dB gain flatness
·Low DC power consumption, 55mA
·Chip size : 2,170 x 1,270x 0.1mm


Specifications

Symbol Parameter Values Unit
Vd Drain bias voltage (3) 5.5 V
Pin Maximum peak input power overdrive (2) +15 dBm
Top Operating temperature range -40 to +85
Tstg Storage temperature range -55 to +125



Description

The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier.

CHA2090 is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2090 is supplied in chip form.


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