CHA2094b

Features:

·Broadband performances : 36-40GHz
·3.0dB Noise Figure
·21dB gain
·1.5dB gain flatness
·Low DC power consumption, 60mA @ 3.5V
·Chip size : 1.72 X 1.08 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	5.0	V
Id	Drain bias current	150	mA
Vg	Gate bias voltage	-2.0 to +0.4	V
Pin	Maximum peak input power overdrive (2)	+15	dBm
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

CHA2094b is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2094b is available in chip form.