CHA2098b

Features:

·Broadband performances : 20-40GHz
·16dBm output power ( 1dB gain comp. )
·19dB ±1.5dB gain
·Low DC power consumption, 150mA @ 3.5V
·Chip size : 1.67 X 0.97 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	4.0	V
Id	Drain bias current	200	mA
Vg	Gate bias voltage	-2.0 to +0.4	V
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The CHA2098b is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.

CHA2098b is manufactured with a P-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2098b is available in chip form.