CHA2190 Selling Leads, Price trend, CHA2190 DataSheet download, circuit diagram from SeekIC.com

Features: ·Broad band performance 20-30GHz·2.2dB noise figure·15dB gain, ± 0.5dB gain flatness·Low DC power consumption, 50mA·20dBm 3rd order intercept point·Chip size : 1.670 x 1.03x 0.1mmSpecifications Symbol Parameter Values Unit VdVg Drain bias voltage (6)Vg1 and Vg2 max 4.5+1 VV...

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SeekIC No. : 004313377 Detail

CHA2190: Features: ·Broad band performance 20-30GHz·2.2dB noise figure·15dB gain, ± 0.5dB gain flatness·Low DC power consumption, 50mA·20dBm 3rd order intercept point·Chip size : 1.670 x 1.03x 0.1mmSpecifica...

CHA2190 Data Sheet

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Part Number:: CHA2190
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/28

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Recent History
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Features: ·Broad band performance 7-13GHz·2.0dB noise figure, 8-13GHz·19dB gain·Low DC power consu...
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Features: ·Broad band performance 10-16GHz·2.0dB noise figure, 10-16GHz·16dB gain, ± 0.5dB gain fl...
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Features: Broad band performance: 10-16GHzGain = 15dB (typical)Noise Figure 2.0dB (typical) Output...

Product Details

Description

Features:

·Broad band performance 20-30GHz
·2.2dB noise figure
·15dB gain, ± 0.5dB gain flatness
·Low DC power consumption, 50mA
·20dBm 3rd order intercept point
·Chip size : 1.670 x 1.03x 0.1mm

Specifications

Symbol	Parameter	Values	Unit
Vd Vg	Drain bias voltage (6) Vg1 and Vg2 max	4.5 +1	V V
Pin	Maximum peak input power overdrive (5)	15	dBm
Top	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

CHA2190 is a two-stages self biased wide band monolithic low noise amplifier.

CHA2190 is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2190 is supplied in chip form.

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CHA2190

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