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Part Number: CHA5290
Description: The CHA5290 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of application...
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CHA5290
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DataSheet
General Description
CHA5290 General Description
The CHA5290 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
CHA5290 Maximum Ratings
| Symbol | Parameter | Values | Unit |
| Vd | Maximum drain bias voltage with Pin max=-2dBm | 6.25 | V |
| Id | Maximum drain bias current | 625 | mA |
| Vg | Gate bias voltage | -2.5 to +0.4 | V |
| Ig | Gate bias current | -2.5 to +2.5 | mA |
| Vgd | Minimum negative gate drain voltage ( Vg - Vd) | -8 | V |
| Pin | Maximum input power overdrive (2) | 3 | dBm |
| Tch | Maximum channel temperature | 175 | |
| Ta | Operating temperature range | -40 to +80 | |
| Tstg | Storage temperature range | -55 to +125 |
CHA5290 Features
·Performances : 17.7 -24GHz
·26dBm output power @ 1dB comp. gain
·26 dB ± 1dB gain
·DC power consumption, 400mA @ 6V
·Chip size : 3.43 x 1.57 x 0.05 mm
·26dBm output power @ 1dB comp. gain
·26 dB ± 1dB gain
·DC power consumption, 400mA @ 6V
·Chip size : 3.43 x 1.57 x 0.05 mm
CHA5290
PDF/DataSheet Download
- Datasheet: CHA5290
- File Size: 121096 KB
- Manufacturer: UMS [United Monolithic Semiconductors]
- Click here to Download
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