CHA5295

Features:

·Performances : 24.5-26.5GHz
·30dBm output power @ 1dB comp.
·17 dB ± 1dB gain
·DC power consumption, 800mA @ 6V
·Chip size : 4.01 x 2.52 x 0.05 mm

Specifications

Symbol	Parameter	Values	Unit
Vd	Maximum drain bias voltage with Pin max=12dBm	+6.25	V
Id	Maximum drain bias current	1400	mA
Vg	Gate bias voltage	-2.5 to +0.4	V
Ig	Gate bias current	-5 to +5	mA
Vdg	Maximum drain to gate voltage (Vd - Vg)	+8.0	V
Pin	Maximum input power overdrive (2)	+15	dBm
Tch	Maximum channel temperature	+175
Ta	Operating temperature range	-40 to +80
Tstg	Storage temperature range	-55 to +125

Description

The CHA5295 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.

CHA5295 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA5295 is available in chip form.