CHA5390

Features: • Broadband performances : 24-30GHz• 25dBm output power.• 24dB gain• Good broadband matchings• Low DC power consumption, 460mA @ 5V• Chip size : 2.99 X 1.31 X 0.10 mmSpecifications Symbol Parameter Values Unit Vd Drain bias voltage 6.0 V ...

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CHA5390 Picture
SeekIC No. : 004313408 Detail

CHA5390: Features: • Broadband performances : 24-30GHz• 25dBm output power.• 24dB gain• Good broadband matchings• Low DC power consumption, 460mA @ 5V• Chip size : 2.99 X ...

floor Price/Ceiling Price

Part Number:
CHA5390
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• Broadband performances : 24-30GHz
• 25dBm output power.
• 24dB gain
• Good broadband matchings
• Low DC power consumption, 460mA @ 5V
• Chip size : 2.99 X 1.31 X 0.10 mm



Specifications

Symbol Parameter Values Unit
Vd
Drain bias voltage 6.0 V
Id Drain bias current 720 mA
Vg Gate bias voltage -2.0 to +0.4 V
Pin Maximum peak input power overdrive (2) +15 dBm
Ta Operating temperature range -40 to +85
Tstg Storage temperature range -55 to +155



Description

The CHA5390 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process.

CHA5390 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA5390 is available in chip form.


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