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Part Number: CHA5390

 

 

 

 

Description: The CHA5390 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of ap...


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CHA5390 General Description


The CHA5390 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process.

The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is available in chip form.

CHA5390 Maximum Ratings

Symbol Parameter Values Unit
Vd
 Drain bias voltage 6.0 V
Id Drain bias current 720 mA
Vg Gate bias voltage -2.0 to +0.4 V
Pin Maximum peak input power overdrive (2) +15 dBm
Ta Operating temperature range -40 to +85
Tstg Storage temperature range -55 to +155

CHA5390 Features

• Broadband performances : 24-30GHz
• 25dBm output power.
• 24dB gain
• Good broadband matchings
• Low DC power consumption, 460mA @ 5V
• Chip size : 2.99 X 1.31 X 0.10 mm

CHA5390 datasheet

CHA5390
PDF/DataSheet Download

  • Datasheet: CHA5390
  • File Size: 181819 KB
  • Manufacturer: UMS [United Monolithic Semiconductors]
  • Click here to Download

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