CHA5390TBF

Features: ·Broadband performance: 24-30GHz·Small signal gain 21dB (typical)·Output power (P-1dB) 24dBm (typical)·Low DC power consumption: 460mA·SMD leadless package·Dimensions: 6.35 x 6.35 x 0.97 mm3Specifications Symbol Parameter Values Unit Vd Drain bias voltage 6.0 V Id Drain...

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SeekIC No. : 004313409 Detail

CHA5390TBF: Features: ·Broadband performance: 24-30GHz·Small signal gain 21dB (typical)·Output power (P-1dB) 24dBm (typical)·Low DC power consumption: 460mA·SMD leadless package·Dimensions: 6.35 x 6.35 x 0.97 m...

floor Price/Ceiling Price

Part Number:
CHA5390TBF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

·Broadband performance: 24-30GHz
·Small signal gain 21dB (typical)
·Output power (P-1dB) 24dBm (typical)
·Low DC power consumption: 460mA
·SMD leadless package
·Dimensions: 6.35 x 6.35 x 0.97 mm3



Specifications

Symbol Parameter Values Unit
Vd Drain bias voltage 6.0 V
Id Drain bias current 720 mA
Vg Gate bias voltage -2.0 to +0.4 V
Pin Maximum peak input power overdrive (2) +15 dBm
Ta Operating temperature range (3) -40 to +70
Tstg Storage temperature range -55 to +155



Description

The monolithic microwave IC (MMIC) in the package is a high gain broadband fourstage monolithic medium power amplifier. CHA5390TBF is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA5390TBF is supplied in a new SMD leadless chip carrier.


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