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Part Number: CHA5390TBF

 

 

 

 

Description: The monolithic microwave IC (MMIC) in the package is a high gain broadband fourstage monolithic medium power amplifier....


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CHA5390TBF General Description


The monolithic microwave IC (MMIC) in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in a new SMD leadless chip carrier.

CHA5390TBF Maximum Ratings

Symbol Parameter Values Unit
Vd Drain bias voltage 6.0 V
Id Drain bias current 720 mA
Vg Gate bias voltage -2.0 to +0.4 V
Pin Maximum peak input power overdrive (2) +15 dBm
Ta Operating temperature range (3) -40 to +70
Tstg Storage temperature range -55 to +155

CHA5390TBF Features

·Broadband performance: 24-30GHz
·Small signal gain 21dB (typical)
·Output power (P-1dB) 24dBm (typical)
·Low DC power consumption: 460mA
·SMD leadless package
·Dimensions: 6.35 x 6.35 x 0.97 mm3

CHA5390TBF datasheet

CHA5390TBF
PDF/DataSheet Download

  • Datasheet: CHA5390TBF
  • File Size: 173629 KB
  • Manufacturer: UMS [United Monolithic Semiconductors]
  • Click here to Download

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