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CJD31C

Specifications SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCBO 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 3.0 A Peak Collector Current ICM 5.0 A Base Current IB 1.0 A Power Dissipation PD 1...

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SeekIC No. : 004313532 Detail

CJD31C: Specifications SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCBO 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 3....

CJD31C Data Sheet

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Part Number:
CJD31C
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/9

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Product Details

Description



Specifications

  SYMBOL   UNITS
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 3.0 A
Peak Collector Current ICM 5.0 A
Base Current IB 1.0 A
Power Dissipation PD 15 W
Power Dissipation (TA=25°C) PD 1.56 W
Operating and Storage      
Junction Temperature TJ,Tstg -65 to +150
Thermal Resistance JC 8.33 /W
Thermal Resistance JA 80.1 /W



Description

The  CENTRAL SEMICONDUCTOR  CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power amplifier and high speed switching applications.



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