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MFG:MITSUBISHI  D/C:2IGBT: 200A600V  

CM200DU-12H Product Image

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Part Number: CM200DU-12H

 

MFG: MITSUBISHI

 

D/C: 2IGBT: 200A600V

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transis...


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CM200DU-12H General Description


Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

CM200DU-12H Maximum Ratings

Ratings Symbol CM900HB-90H Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage(G-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 200 Amperes
Peak Collector Current ICM 400* Amperes
Emitter Current** (TC = 25°C) IE 200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (Tc = 25°C,Tj 150°C) Pc 650 Watts
Mounting Torque, M5 Main Terminal - 31 in-lb
Mounting Torque, M6 Mounting - 40 in-lb
Weight - 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms

CM200DU-12H Features

Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery Free-Wheel Diode
Isolated Baseplate for Easy Heat Sinking

CM200DU-12H Typical Application

AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies

CM200DU-12H datasheet

CM200DU-12H
PDF/DataSheet Download

  • Datasheet: CM200DU-12H
  • File Size: 59434 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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