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MFG:MITSUBISHI  D/C:6IGBT: 75A1200V  

CM75TU-24H Product Image

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Part Number: CM75TU-24H

 

MFG: MITSUBISHI

 

D/C: 6IGBT: 75A1200V

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three ph...


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CM75TU-24H General Description


Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

CM75TU-24H Maximum Ratings

Ratings Symbol CM75TU-24H Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage(G-E SHORT) VCES ±20 Volts
Collector Current (Tc = 25°C) IC 75 Amperes
Peak Collector Current(Tj 150°C) ICM 150* Amperes
Emitter Current** IE 75 Amperes
Peak Emitter Current** IEM 150* Amperes
Maximum Collector Dissipation (Tc< 25°) Pc 600 Watts
Mounting Torque, M5 Main Terminal - 2.5~3.5 N.m
.Mounting Torque, M5 Mounting - 2.5~3.5 N.m
Weight - 380 Grmas
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms

CM75TU-24H Features

·Low Drive Power
· Low VCE(sat)
· Discrete Super-Fast Recovery Free-Wheel Diode
· High Frequency Operation
· Isolated Baseplate for Easy Heat Sinking

CM75TU-24H Typical Application

·AC Motor Control
· Motion/Servo Control
· UPS
· Welding Power Supplies

CM75TU-24H datasheet

CM75TU-24H
PDF/DataSheet Download

  • Datasheet: CM75TU-24H
  • File Size: 52626 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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Related Part Number

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