CMPD4150

Product : Switching Diodes
Packaging : Reel
Max Surge Current : 4 A
Forward Voltage Drop : 1 V
Configuration : Single
Maximum Reverse Leakage Current : 0.1 uA
Peak Reverse Voltage : 50 V
Recovery Time : 4 ns
Operating Temperature Range : - 65 C to + 150 C
Forward Continuous Current : 0.25 A
Package / Case : SOT-23
Maximum Power Dissipation : 0.35 W


Specifications

	SYMBOL		UNITS
Continuous Reverse Voltage	VR	50	v
Peak Repetitive Reverse Voltage	VRRM	50	V
Continuous Forward Current	IF	250	mA
Peak Repetitive Forward Current	IFRM	250	mA
Forward Surge Current, tp=1sec	IFSM	4000	mA
Forward Surge Current, tp=1 sec	IFSM	1000	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65to+150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.