CMPT5179

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
DC Collector/Base Gain hfe Min : 25
Collector- Emitter Voltage VCEO Max : 12 V
Package / Case : SOT-23
Maximum DC Collector Current : 0.05 A
Emitter- Base Voltage VEBO : 2.5 V
Maximum Operating Frequency : 1450 MHz


Specifications

	SYMBOL		UNITS
Collector-Base Voltage	VCBO	20	V
Collector-Emitter Voltage	VCEO	12	V
Emitter-Base Voltage	VEBO	2.5	V
Collector Current	IC	50	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications.