CNY171

Maximum Forward Diode Voltage : 1.65 V
Minimum Operating Temperature : - 55 C
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Packaging : Bulk
Input Type : DC
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6
Maximum Collector Emitter Voltage : 70 V
Current Transfer Ratio : 80 %


Features:

UL recognized (File # E90700)
VDE recognized
Add option V for white package (e.g., CNY17F2VM)
File #102497
Add option '300' for black package (e.g., CNY17F2300)
File #94766
Current transfer ratio in select groups
High BVCEO-70V minimum (CNY17X/M, CNY17FX/M, MOC8106/7/8)
Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation.
Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FX/M, MOC810X)


Application

Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls


Specifications

Symbol	Parameters	Device	Value	Units
TOTAL DEVICE
TSTG	Storage Temperature	M non M M non M All M non M M non M	-40 to +150 -55 to +150 -40 to +100 -55 to +100 260 for 10 sec 250 250 2.94 3.30	°C
TOPR	Operating Temperature			°C
TSOL	Lead Solder Temperature			°C
PD	Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C			mW
				mW/°C

Description

The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.