CNY75(G)

Features: Approvals:`BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402`FIMKO (SETI): EN 60950, Certificate number 12399`Underwriters Laboratory (UL) 1577 recognized, file number E-76222`VDE 0884, Certificate number 94778 VDE 0884 related features:`Rate...

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SeekIC No. : 004315221 Detail

CNY75(G): Features: Approvals:`BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402`FIMKO (SETI): EN 60950, Certificate number 12399`Underwriters Laboratory (UL) 157...

floor Price/Ceiling Price

Part Number:
CNY75(G)
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

Approvals:
`BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
`FIMKO (SETI): EN 60950, Certificate number 12399
`Underwriters Laboratory (UL) 1577 recognized, file number E-76222
`VDE 0884, Certificate number 94778 VDE 0884 related features:
`Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak
`Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
`Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
`Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
`Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275
`Thickness through insulation 0.75 mm General features:
`Isolation materials according to UL94-VO
`Pollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 664)
`Climatic classification 55/100/21 (IEC 68 part 1)
`Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection
`Low temperature coefficient of CTR
`CTR offered in 3 groups
`Coupling System A



Application

Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
` For appl. class I IV at mains voltage 300 V
` For appl. class I III at mains voltage 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, computer
peripheral interface, microprocessor
system interface.



Specifications

Parameter Test Conditions Symbol Value Unit
Reverse voltage   VR 5 V
Forward current   IF 60 mA
Forward surge current tp 10s IFSM 3 A
Power dissipation Tamb 25 PV 100 mW
Junction temperature   Tj 125
Output (Detector)
Collector base voltage   VCBO 90 V
Collector emitter voltage   VCBO 90 V
Emitter collector voltage   VCBO 7 V
Collector current   IC 50 mA
Collector peak current tp/T = 0.5, tp10 ms ICM 100 mA
Power dissipation Tamb 25 PV 150 mW
Junction temperature   Tj 125
Coupler
AC isolation test voltage (RMS) t = 1 min VIO 3.75 kV
Total power dissipation Tamb 25 Ptot 250 mW
Ambient temperature range   Tamb 55 to +100
Storage temperature range   Tstg 55 to +125
Soldering temperature 2 mm from case, t 10 s Tsd 260



Description

The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.


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