Features: • Adoption of MBIT processes.• High current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).• High allowable power dissipation.A...
CPH3122: Features: • Adoption of MBIT processes.• High current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.• Ultrasmall package facilitates ...
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| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 30 |
| IC [A] | 3 |
| PC [W] | 0.9
When mounted on ceramic substrate (600mm²*0.8mm) |
| Electrical characteristics | |
|---|---|
| hFE min | 200 |
| hFE max | 560 |
| VCE [V] | 2 |
| IC [A] | 0.5 |
| VCE (sat) typ [V] | 0.18 |
| VCE (sat) max [V] | 0.27 |
| IC [A] | 1.5 |
| IB [mA] | 30 |
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-to-Base Voltage |
VCBO |
(-30)40 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
(-)30 |
V | |
| Emitter-to-Base Voltage |
VEBO |
(-)5 |
V | |
| Collector Current |
IC |
(-)3 |
A | |
| Collector Current (Pulse) |
ICP |
(-)5 |
A | |
| Base Current |
IB |
(-)600 |
mA | |
| Collector Dissipation |
PC |
Mounted on a ceramic board (600m50.8mm) |
0.9 |
W |
| Junction Temperature |
Tch |
150 |
||
| Storage Temperature |
Tstg |
-55 to +150 |