Features: · Adoption of FBET, MBIT processes.· High current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall-package of 0.9mm mounting heighfacilitates miniaturization in end products. · High allowable power dissipation.Application· DC-DC converters rel...
CPH3205: Features: · Adoption of FBET, MBIT processes.· High current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall-package of 0.9mm mounting heighfacilitates m...
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|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-to-Base Voltage |
VCBO |
(-50)80 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
(-50)80 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
(-)50 |
V | |
| Emitter-to-Base Voltage |
VEBO |
(-)6 |
V | |
| Collector Current |
IC |
(-)3 |
A | |
| Collector Current (Pulse) |
ICP |
(-)6 |
A | |
| Base Current |
IB |
(-)600 |
mA | |
| Collector Dissipation |
PC |
Mounted on a ceramic board (600m*0.8mm) |
0.9 |
W |
| Junction Temperature |
Tch |
150 |
||
| Storage Temperature |
Tstg |
-55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 50 |
| IC [A] | 3 |
| PC [W] | 0.9
When mounted on ceramic substrate (600mm²*0.8mm) |
| Electrical characteristics | |
|---|---|
| hFE min | 200 |
| hFE max | 560 |
| VCE [V] | 2 |
| IC [A] | 0.1 |
| VCE (sat) typ [V] | 0.14 |
| VCE (sat) max [V] | 0.21 |
| IC [A] | 2 |
| IB [mA] | 100 |