Features: · Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.· The CPH5702 consists of two chips encapsulated in a package which are equivalent to the CPH3209 and the SB07-03C, respectively.· Ultrasmall-sized package perm...
CPH5702: Features: · Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.· The CPH5702 consists of two chips encapsulated in a packag...
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|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| [TR] | ||||
| Collector-to-Base Voltage |
VCBO |
40 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
30 |
V | |
| Emitter-to-Base Voltage |
VEBO |
5 |
V | |
| Collector Current |
IC |
3 |
A | |
| Collector Current (Pulse) |
ICP |
5 |
A | |
| Base Current |
IB |
600 |
mA | |
| Collector Dissipation |
PC |
Mounted on a ceramic board (600m*0.8mm) |
0.9 |
W |
| Junction Temperature |
Tch |
150 |
||
| Storage Temperature |
Tstg |
-55 to +125 |
||
| Repetitive Peak Reverse Voltage |
VRRM |
30 |
V | |
| Non-repetitive Peak Reverse Surge Voltage |
VRSM |
35 |
V | |
| Average Output Current |
IO |
700 |
mA | |
| Surge Current |
IFSM |
50Hz sine wave, 1 cycle |
10 |
A |
| Junction Temperature |
Tch |
-55 to +125 |
||
| Storage Temperature |
Tstg |
-55 to +125 |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 30 |
| IC [A] | 3 |
| PC [W] | 0.9
When mounted on ceramic substrate (600mm²*0.8mm) |
| VRRM [V] | 30 |
| IO [A] | 0.7 |
| Electrical characteristics | |
|---|---|
| hFE min | 200 |
| hFE max | 560 |
| VCE [V] | 2 |
| IC [A] | 0.5 |
| VCE (sat) typ [V] | 0.12 |
| VCE (sat) max [V] | 0.18 |
| IC [A] | 1.5 |
| IB [mA] | 30 |
| VF max [V] | 0.55 |
| IF [A] | 0.7 |
| IR max [mA] | 0.08 |
| VR [V] | 15 |
| trr max [nS] | 10 |
| IF [A] | 0.1 |