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CPH5839

Features: • DC / DC converter applications.• Composite type with a N-Channel Sillicon MOSFET (MCH3409) and a schottky barrier diode (SBS005)contained in one package facilitating high-density mounting.[MOSFET]• Low ON-resistance.• Ultrahigh-speed switching.• Low voltag...

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SeekIC No. : 004315735 Detail

CPH5839: Features: • DC / DC converter applications.• Composite type with a N-Channel Sillicon MOSFET (MCH3409) and a schottky barrier diode (SBS005)contained in one package facilitating high-den...

CPH5839 Data Sheet

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Part Number:
CPH5839
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• DC / DC converter applications.
• Composite type with a N-Channel Sillicon MOSFET (MCH3409) and a schottky barrier diode (SBS005)
contained in one package facilitating high-density mounting.
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• Low voltage drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.




Specifications

Absolute maximum ratings
VDSS [V] 20
ID [A] 2
PD [W] 0.9
When mounted on ceramic substrate (600mm²*0.8mm) 1unit
VRRM [V] 30
IO [A] 1
Electrical characteristics
VGS(off) min to max [V] 0.4 to 1.3
|yfs| typ [S] 3.5
RDS(on)1 typ [] 0.1
RDS(on)1 max [] 0.13
VGS [V] 4
ID [A] 1
RDS(on)2 typ [] 0.13
RDS(on)2 max [] 0.18
VGS [V] 2.5
ID [A] 0.5
Ciss [pF] 190
VF max [V] 0.47
IF [A] 1
IR [µA] 500
VR [V] 15
trr max [ns] 15
IF=IR [mA] 100
Operation frequency [kHz] 1000


Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID 2.0 A
Drain Current (Pulse) IDP PW10ms, duty cycle1% 8.0 A
Allowable Power Dissipation PD Mounted on a ceramic board (600mm2*0.8mm) 1unit 0.9 W
Channel Temperature Tch 150
Storage Temperature Tstg --55 to +125
[SBD]
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V
Average Output Current IO 1 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A
Junction Temperature Tj --55 to +125
Storage Temperature Tstg --55 to +125





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