CPV362M4F

IGBT SIP MODULE 600V 8.8A IMS-2

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CPV362M4F Picture
SeekIC No. : 004131069 Detail

CPV362M4F: IGBT SIP MODULE 600V 8.8A IMS-2

floor Price/Ceiling Price

US $ 20.7~20.7 / Piece | Get Latest Price
Part Number:
CPV362M4F
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~160
  • Unit Price
  • $20.7
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2021/1/25

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Product Details

Quick Details

Processor Series : SCF5249 Series: -
Manufacturer: Vishay Semiconductors IGBT Type: -
Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V
Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 8.8A Current - Collector (Ic) (Max): 8.8A
Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.34nF @ 30V
Power - Max: 23W Input: Standard
NTC Thermistor: No Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2    

Description

Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
IGBT Type: -
Series: -
Current - Collector Cutoff (Max): 250µA
Mounting Type: Through Hole
Configuration: Three Phase Inverter
Manufacturer: Vishay Semiconductors
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2
Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 8.8A
Current - Collector (Ic) (Max): 8.8A
Input Capacitance (Cies) @ Vce: 0.34nF @ 30V
Power - Max: 23W


Features:

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve



Specifications

  Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current, each IGBT
8.8
A
IC @ TC = 100°C Continuous Collector Current, each IGBT
4.8
ICM Pulsed Collector Current
26
ILM Clamped Inductive Load Current
26
IF @ TC = 100°C Diode Continuous Forward Current
3.4
IFM Diode Maximum Forward Current
26
VGE Gate-to-Emitter Voltage
±20
V
VISOL Isolation Voltage, any terminal to case, 1 minute
2500
VRMS
PD @ TC = 25°C Maximum Power Dissipation, each IGBT
23
W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
9.1
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
°C
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw
5-7 lbf•in (0.55-0.8 N•m)



Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. CPV362M4F are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology CPV362M4F has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.




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