CPV362M4F

Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
IGBT Type: -
Series: -
Current - Collector Cutoff (Max): 250µA
Mounting Type: Through Hole
Configuration: Three Phase Inverter
Manufacturer: Vishay Semiconductors
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2
Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 8.8A
Current - Collector (Ic) (Max): 8.8A
Input Capacitance (Cies) @ Vce: 0.34nF @ 30V
Power - Max: 23W


Features:

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25°C	Continuous Collector Current, each IGBT	8.8	A
IC @ TC = 100°C	Continuous Collector Current, each IGBT	4.8
ICM	Pulsed Collector Current	26
ILM	Clamped Inductive Load Current	26
IF @ TC = 100°C	Diode Continuous Forward Current	3.4
IFM	Diode Maximum Forward Current	26
VGE	Gate-to-Emitter Voltage	±20	V
VISOL	Isolation Voltage, any terminal to case, 1 minute	2500	VRMS
PD @ TC = 25°C	Maximum Power Dissipation, each IGBT	23	W
PD @ TC = 100°C	Maximum Power Dissipation, each IGBT	9.1
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to +150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting torque, 6-32 or M3 screw	5-7 lbf•in (0.55-0.8 N•m)

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. CPV362M4F are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology CPV362M4F has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.