CPV362M4K

IGBT SIP MODULE 600V 31 IMS-2

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CPV362M4K Picture
SeekIC No. : 004131070 Detail

CPV362M4K: IGBT SIP MODULE 600V 31 IMS-2

floor Price/Ceiling Price

US $ 20.7~20.7 / Piece | Get Latest Price
Part Number:
CPV362M4K
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~160
  • Unit Price
  • $20.7
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2021/1/25

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Product Details

Quick Details

Processor Series : SCF5249 Series: -
Manufacturer: Vishay Semiconductors IGBT Type: -
Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V
Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 3A Current - Collector (Ic) (Max): 5.7A
Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.45nF @ 30V
Power - Max: 23W Input: Standard
NTC Thermistor: No Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2    

Description

Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
IGBT Type: -
Series: -
Current - Collector Cutoff (Max): 250µA
Mounting Type: Through Hole
Configuration: Three Phase Inverter
Manufacturer: Vishay Semiconductors
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2
Power - Max: 23W
Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 3A
Current - Collector (Ic) (Max): 5.7A
Input Capacitance (Cies) @ Vce: 0.45nF @ 30V


Features:

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve




Specifications

  Parameter Max. Units
VCES
Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current, each IGBT 5.7 A
IC @ TC = 100°C
Continuous Collector Current, each IGBT 3.0

ICM
Pulsed Collector Current 11
ILM Clamped Inductive Load Current 11
IF @ TC = 100°C
Diode Continuous Forward Current 3.4
IFM Diode Maximum Forward Current 11
tsc Short Circuit Withstand Time 10 s

VGE
Gate-to-Emitter Voltage ± 20 V
VISOL
Isolation Voltage, any terminal to case, 1 minute 2500 VRMS
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150 °C
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)  
  Mounting torque, 6-32 or M3 screw 5-7 lbf•in (0.55 - 0.8 N•m)  



Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. CPV362M4K are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a premium.




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