CQY37N

Beam Angle :
Minimum Operating Temperature :
Packaging : Bulk
Maximum Operating Temperature : + 100 C
Radiant Intensity : 5 mW/sr
Wavelength : 950 nm
Package / Case : T-3/4


Features:


Suitable for pulse operation

Standard T3/4lensed miniature package

Angle of half intensity = ± 12°

Peak wavelength p = 950 nm

Good spectral matching to Si photodetectors




Application

Radiation source in near infrared range




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		VR	5	V
Forward current		IF	60	mA
Forward surge current	tp 100 s	IFSM	1.5	A
Power dissipation		PV	100	mW
Junction temperature		Tj	125
Storage Temperature Range		Tstg	25...+100
Soldering Temperature	t 3 s	Tsd	245
Thermal Resistance Junction/Ambient		RthJA	450	K/W

Description

CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package.
Its clear lens provides a high radiant intensity without external optics.
The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters.