CS218I-30M

The CS218I-30M isan epoxy molded silicon SCR designed for sensing circuit applications and control systems. The device is mounted in a TO-218 case with an isolated mounting tab.

The absolute maximum ratings of the CS218I-30M are: (1)peak repetitive off-state voltage: 600V; (2)RMS on-state current: 30A; (3)peak one cycle surge: 400A; (4)I2t value for fusing: 800A2s; (5)peak gate power: 50W; (6)average gate power dissipation: 1.0W; (7)peak forward gate current: 4.0A; (8)peak forward gate voltage: 16V; (9)peak reverse gate voltage: 5V; (10)storage temperature: -40 to +150; (11)junction temperature: -40 to +125; (12)thermal temperature: 50/W; (13)thermal temperature: 1.1/W; (14)isolation voltage: 2500V.

The following is about the electrical characteristics of CS218I-30M: 1)IDRM: 0.02mA max at rated VDRM; (2)IDRM: 6.00mA max at rated VDRM, TC=125; (3)IGT: 50mA at VD=12V, RL=33; (4)IH: 75mA at IT=500mA; (5)VGT: 1.50V at VD=12V, RL=33; (6)VTM: 2.10V at ITM=60A, tp=380ms.