MOSFET P-Ch NexFET Power MOSFETs
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 12 V | ||
| Gate-Source Breakdown Voltage : | - 6 V | Continuous Drain Current : | 2.2 A | ||
| Resistance Drain-Source RDS (on) : | 82 mOhms at 4.5 V | Configuration : | Single Dual Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DSBGA-4 | Packaging : | Reel |
| Technical/Catalog Information | CSD23201W10 |
| Vendor | Texas Instruments (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 1.1A |
| Rds On (Max) @ Id, Vgs | 82 mOhm @ 500mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 325pF @ 6V |
| Power - Max | 1W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 2.4nC @ 4.5V |
| Package / Case | 4-DSBGA |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | CSD23201W10 CSD23201W10 296 24258 6 ND 296242586ND 296-24258-6 |