Purchase CXK581000AYM, In-stock CXK581000AYM From SeekIC.
Part Number: CXK581000AYM
Description: The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits.A polysilicon TF...
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CXK581000AYM
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DataSheet
General Description
CXK581000AYM General Description
The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits.
A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability.
Special feature are low power consumption, high speed and broad package line-up.
The CXK581000ATM/AYM/AM/AP ia a suitable RAM for portable equipment with battery back up.
CXK581000AYM Maximum Ratings
| Item | Symbol | Rating | Unit | |
| Supply voltage | VCC | 0.5 to +7.0 | V | |
| Input voltage | VIN | 0.5* to VCC +0.5 | ||
| Input and output voltage | VI/O | 0.5* to VCC +0.5 | ||
| Allowable power dissipation | PD | CXK581000AP | 1.0 | W |
| CXK581000ATM/AYM/AM | 0.7 | |||
| Operating temperature | Topr | 0 to +70 | °C | |
| Storage temperature | Tstg | 55 to +150 | ||
| Soldering temperature | Tsolder | CXK581000AP | 260 • 10 | |
| CXK581000ATM/AYM/AM | 235 • 10 | °C • s | ||
CXK581000AYM Features
• Fast access time:
CXK581000ATM/AYM/AM/AP (Access time)
-55LL/55SL 55ns (Max.)
-70LL/70SL 70ns (Max.)
-10LL/10SL 100ns (Max.)
• Low standby current:
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL 20µA (Max.)
-55SL/70SL/10SL 12µA (Max.)
• Low data retention current
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL 12µA (Max.)
-55SL/70SL/10SL 4µA (Max.)
• Single +5V supply: +5V ±10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
• CXK581000ATM/AYM
8mm×20mm 32 pin TSOP package
• CXK581000AM 525mil 32 pin SOP package
• CXK581000AP 600mil 32 pin DIP package
CXK581000ATM/AYM/AM/AP (Access time)
-55LL/55SL 55ns (Max.)
-70LL/70SL 70ns (Max.)
-10LL/10SL 100ns (Max.)
• Low standby current:
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL 20µA (Max.)
-55SL/70SL/10SL 12µA (Max.)
• Low data retention current
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL 12µA (Max.)
-55SL/70SL/10SL 4µA (Max.)
• Single +5V supply: +5V ±10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
• CXK581000ATM/AYM
8mm×20mm 32 pin TSOP package
• CXK581000AM 525mil 32 pin SOP package
• CXK581000AP 600mil 32 pin DIP package
CXK581000AYM Connection Diagram
CXK581000AYM
PDF/DataSheet Download
- Datasheet: CXK581000AYM
- File Size: 295815 KB
- Manufacturer: SONY [Sony Corporation]
- Click here to Download
- ·CXK1012
- SONY [Sony Corporation]
- 1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
- 484995 KB
- ·CXK1012P
- SONY [Sony Corporation]
- 1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
- 484995 KB
- ·CXK1024P
- ETC [ETC]
- MNOS 2K (256 X 8)-BIT NON-VOLATILE MEMORY
- 15470 KB
- ·CXK581000AM
- SONY [Sony Corporation]
- 131072-word x 8-bit High Speed CMOS Static RAM
- 295815 KB
- ·CXK581000AM-10LL
- SONY [Sony Corporation]
- 131072-word x 8-bit High Speed CMOS Static RAM
- 295815 KB
- ·CXK581000AM-10SL
- SONY [Sony Corporation]
- 131072-word x 8-bit High Speed CMOS Static RAM
- 295815 KB
- ·CXK581000AM-55LL
- SONY [Sony Corporation]
- 131072-word x 8-bit High Speed CMOS Static RAM
- 295815 KB
- ·CXK581000AM-55SL
- SONY [Sony Corporation]
- 131072-word x 8-bit High Speed CMOS Static RAM
- 295815 KB
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The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits.A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability.Special feature are low power consumption, high spee...
CXK581000AP
The CXK581000AP is a high speed CMOS static RAM organized as 131072-words by 8 bits.A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability.Special feature are low power consumption, high speed and broad...
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