CY27C256

The CY27C256 is a high-performance 32,768-word by 8-bit CMOS EPROM. When disabled (CE HIGH), the CY27C256 automatically powers down into a low-power stand-by mode. The CY27C256 is packaged in the industry standard 600-mil DIP, PLCC, and TSOP packages. The CY27C256 is also available in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.

The CY27C256 offers the advantage of lower power and superior performance and programming yield. The EPROM cell requires only 12.5V for the super voltage, and low current requirements allow for gang programming. The EPROM cells allow each memory location to be tested 100% because each location is written into, erased, and repeatedly exercised prior to encapsulation. Each EPROM is also tested for AC performance to guarantee that after customer programming, the product will meet both DC and AC specification limits.

Reading the CY27C256 is accomplished by placing active LOW signals on OE and CE. The contents of the memory location addressed by the address lines (A0 - A14) will become available on the output lines (O0 - O7).