Features: • High density-30K to 200K usable gates-512 to 3072 macrocells-136 to 428 maximum I/O pins-Twelve dedicated inputs including four clock pins, four global I/O control signal pins and four JTAGinterface pins for boundary scan and reconfig-urability• Embedded memory-80K to 480K ...
CY39100V256-125BGC: Features: • High density-30K to 200K usable gates-512 to 3072 macrocells-136 to 428 maximum I/O pins-Twelve dedicated inputs including four clock pins, four global I/O control signal pins and ...
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(Above which the useful life may be impaired. For user guide-lines, not tested.)
Storage Temperature
(39K200, 208 EQFP) .................................45°C to +125°C
Storage Temperature
(all other densities and packages) ............65°C to +150°C
Soldering Temperature................................................. 220°C
Ambient Temperature with
Power Applied..............................................40°C to +85°C
Junction Temperature....................................................135°C
VCC to Ground Potential ....................................0.5V to 4.6V
VCCIO to Ground Potential ................................0.5V to 4.6V
DC Voltage Applied to Outputs
in High-Z state ..................................................0.5V to 4.5V
DC Input voltage...............................................0.5V to 4.5V
DC Current into Outputs........................................ ± 20 mA[6]
Static Discharge Voltage
(per JEDEC EIA./JESD22A114A)................................. >2001V
Latch-up Current ....................................................... >200 mA