CY39100V256-125BGC

Features: • High density-30K to 200K usable gates-512 to 3072 macrocells-136 to 428 maximum I/O pins-Twelve dedicated inputs including four clock pins, four global I/O control signal pins and four JTAGinterface pins for boundary scan and reconfig-urability• Embedded memory-80K to 480K ...

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SeekIC No. : 004319350 Detail

CY39100V256-125BGC: Features: • High density-30K to 200K usable gates-512 to 3072 macrocells-136 to 428 maximum I/O pins-Twelve dedicated inputs including four clock pins, four global I/O control signal pins and ...

floor Price/Ceiling Price

Part Number:
CY39100V256-125BGC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

• High density
-30K to 200K usable gates
-512 to 3072 macrocells
-136 to 428 maximum I/O pins
-Twelve dedicated inputs including four clock pins, four global I/O control signal pins and four JTAG 
   interface pins for boundary scan and reconfig-urability
• Embedded memory
-80K to 480K bits embedded SRAM
• 16K to 96K bits of (dual-port) channel memory
• High speed 233-MHz in-system operation
•AnyVolt™interface
 
-3.3V, 2.5V,1.8V, and 1.5V I/O capability
• Low-power operation
-0.18-mm six-layer metal SRAM-based logic process
-Full-CMOS implementation of product term array
-Standby current as low as 5mA
• Simple timing model
-No penalty for using full 16 product terms/macrocell
-No delay for single product term steering or sharing
• Flexible clocking
-Spread Aware™ PLL drives all four clock networks
• Allows 0.6% spread spectrum input clocks
• Several multiply, divide and phase shift options
-Four synchronous clock networks per device
-Locally generated product term clock
-Clock polarity control at each register
• Carry-chain logic for fast and efficient arithmetic opera-tions
• Multiple I/O standards supported



Specifications

(Above which the useful life may be impaired. For user guide-lines, not tested.)
Storage Temperature
(39K200, 208 EQFP)  .................................45°C to +125°C
Storage Temperature
(all other densities and packages) ............65°C to +150°C
Soldering Temperature................................................. 220°C
Ambient Temperature with
Power Applied..............................................40°C to +85°C
Junction Temperature....................................................135°C
VCC to Ground Potential ....................................0.5V to 4.6V
VCCIO to Ground Potential ................................0.5V to 4.6V
DC Voltage Applied to Outputs
in High-Z state ..................................................0.5V to 4.5V
DC Input voltage...............................................0.5V to 4.5V
DC Current into Outputs........................................ ± 20 mA[6]
Static Discharge Voltage
(per JEDEC EIA./JESD22A114A)................................. >2001V
Latch-up Current ....................................................... >200 mA




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