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Part Number: CY62127BV
Description: The CY62127BV is a high-performance CMOS Static RAM organized as 65,536 words by 16 bits. This device has an automatic ...
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CY62127BV
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DataSheet
General Description
CY62127BV General Description
The CY62127BV is a high-performance CMOS Static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption by 99% when deselected. The device enters power-down mode when CE is HIGH or when CE is LOW and both BLE and BHE are HIGH.
Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE ) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A15).
Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O9 to I/O16. See the truth table at the back of this data sheet for a complete description of read and write modes.
The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE , BLE HIGH), or during a write operation (CE LOW, and WE LOW).
The CY62127BV is available in standard 44-pin TSOP Type II (forward pinout) and fBGA packages.
CY62127BV Maximum Ratings
Storage Temperature .........................................................65°C to +150°C
Ambient Temperature with Power Applied.......................... 55°C to +125°C
Supply Voltage on VCC to Relative GND[1] ............................... 0.5V to +4.6V
DC Voltage Applied to Outputs in High Z State[1] .............0.5V to VCC + 0.5V
DC Input Voltage[1] ..........................................................0.5V to VCC + 0.5V
Current into Outputs (LOW) .................................................................... 20 mA
Static Discharge Voltage ....................................................................... >2001V
(per MIL-STD-883, Method 3015) Latch-Up Current............................. >200 mA
Ambient Temperature with Power Applied.......................... 55°C to +125°C
Supply Voltage on VCC to Relative GND[1] ............................... 0.5V to +4.6V
DC Voltage Applied to Outputs in High Z State[1] .............0.5V to VCC + 0.5V
DC Input Voltage[1] ..........................................................0.5V to VCC + 0.5V
Current into Outputs (LOW) .................................................................... 20 mA
Static Discharge Voltage ....................................................................... >2001V
(per MIL-STD-883, Method 3015) Latch-Up Current............................. >200 mA
CY62127BV Features
• 2.7V3.6V operation
• CMOS for optimum speed/power
• Low active power (70 ns, LL version)
-54 mW (max.) (15 mA)
• Low standby power (70 ns, LL version)
-54 µW (max.) (15 µA)
• Automatic power-down when deselected
-Power down either with CE or BHE and BLE HIGH
• Independent control of Upper and Lower Bytes
• Available in 44-pin TSOP II (forward) and fBGA
• CMOS for optimum speed/power
• Low active power (70 ns, LL version)
-54 mW (max.) (15 mA)
• Low standby power (70 ns, LL version)
-54 µW (max.) (15 µA)
• Automatic power-down when deselected
-Power down either with CE or BHE and BLE HIGH
• Independent control of Upper and Lower Bytes
• Available in 44-pin TSOP II (forward) and fBGA
CY62127BV Connection Diagram
CY62127BV
PDF/DataSheet Download
- Datasheet: CY62127BV
- File Size: 271190 KB
- Manufacturer: CYPRESS [Cypress Semiconductor]
- Click here to Download
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