CY62137CV

Features:

Very high speed: 55 ns and 70 ns
Voltage range:
-CY62137CV25: 2.2V2.7V
-CY62137CV30: 2.7V3.3V
-CY62137CV33: 3.0V3.6V
-CY62137CV: 2.7V3.6V
Pin-compatible with the CY62137V
Ultra-low active power
-Typical active current: 1.5 mA @ f = 1 MHz
-Typical active current: 5.5 mA @ f = fmax (70-ns speed)
Low and ultra-low standby power
Easy memory expansion with CE and OE features
Automatic power-down when deselected
CMOS for optimum speed/power
Packages offered in a 48-ball FBGA


Description

The CY62137CV25/30/33 and CY62137CV are high-performance CMOS static RAMs organized as 128K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active current. This is ideal for providing More BatteryLife™ (MoBL®) in portable applications such as cellular telephones.
The devices also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH).
The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH CY62137CV. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet CY62137CV for a complete
description of read and write modes.