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MFG:CY D/C:05+
Part Number: CY6264
MFG: CY
D/C: 05+
Description: The CY6264 is a high-performance CMOS static RAM orga- nized as 8192 words by 8 bits. Easy memory expansion isprovi...
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CY6264
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Suppliers
DataSheet
General Description
CY6264 General Description
The CY6264 is a high-performance CMOS static RAM orga- nized as 8192 words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE1 ), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. Both devices have an automatic pow-er-down feature (CE1), reducing the power consumption by over 70% when deselected. The CY6264 is packaged in a 450-mil (300-mil body) SOIC.
An active LOW write enable signal (WE) controls the writ- ing/reading operation of the memory. When CE1 and WE in-puts are both LOW and CE2 is HIGH, data on the eight data input/output pins (I/O0through I/O7 ) is written into the memory location addressed by the address present on the address pins (A0 through A12). Reading the device is accomplished by selecting the device and enabling the outputs, CE1 and OE active LOW, CE2 active HIGH, while WE remains inactive or HIGH. Under these conditions, the contents of the location ad- dressed by the information on address pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH. A die coat is used to insure alpha immunity.
CY6264 Maximum Ratings
Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage to Ground Potential..................0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ............................................0.5V to +7.0V
DC Input Voltage[1].........................................0.5V to +7.0V
Electrical Characteristics Over the Operating Range
Output Current into Outputs (LOW) .............................20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage to Ground Potential..................0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ............................................0.5V to +7.0V
DC Input Voltage[1].........................................0.5V to +7.0V
Electrical Characteristics Over the Operating Range
Output Current into Outputs (LOW) .............................20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
CY6264 Features
* 55, 70 ns access times
* CMOS for optimum speed/power
* Easy memory expansion with CE1, CE2 , and OE fea- tures
* TTL-compatible inputs and outputs
* Automatic power-down when deselected
* CMOS for optimum speed/power
* Easy memory expansion with CE1, CE2 , and OE fea- tures
* TTL-compatible inputs and outputs
* Automatic power-down when deselected
CY6264 Connection Diagram
CY6264
PDF/DataSheet Download
- Datasheet: CY6264
- File Size: 258774 KB
- Manufacturer: Cypress
- Click here to Download
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