CY7C0430V

Features: • True four-ported memory cells which allow simultaneous access of the same memory location• Synchronous Pipelined device-64K x 18 organization• Pipelined output mode allows fast 133-MHz operation• High Bandwidth up to 10 Gbps (133 MHz x 18 bits wide x 4 ports)...

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SeekIC No. : 004319639 Detail

CY7C0430V: Features: • True four-ported memory cells which allow simultaneous access of the same memory location• Synchronous Pipelined device-64K x 18 organization• Pipelined output mode all...

floor Price/Ceiling Price

Part Number:
CY7C0430V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Description



Features:

• True four-ported memory cells which allow simultaneous
   access of the same memory location
• Synchronous Pipelined device
-64K x 18 organization
• Pipelined output mode allows fast 133-MHz operation
• High Bandwidth up to 10 Gbps (133 MHz x 18 bits wide x 4 ports)
• 0.25-micron CMOS for optimum speed/power
• High-speed clock to data access 4.7 ns (max.)
• 3.3V Low operating power
-Active = 750mA (maximum)
-Standby = 1mA (maximum)
• Counter wrap-around control
-Internal mask register controls counter wrap-around
-Counter-Interrupt flags to indicate wrap-around
• Counter readback on address lines
• Mask register readback on address lines
• Interrupt flags for message passing
• Master reset for all ports
• Width and depth expansion capabilities
• Dual Chip Enables on all ports for easy depth expansion
• Separate upper-byte and lower-byte controls on all ports
• 272-BGA package (27 mm x 27 mm 1.27 mm ball pitch)
• Commercial and Industrial temperature ranges
• IEEE 1149.1 JTAG boundary scan
• BIST (Built In Self Test) controller



Specifications

(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature ................................ 65°C to + 150°C
Ambient Temperature with
Power Applied ............................................55°C to + 125°C
Supply Voltage to Ground Potential .............. 0.5V to + 4.6V
DC Voltage Applied to
Outputs in High Z State............................0.5V to VCC+0.5V
DC Input Voltage ..................................... 0.5V to VCC+0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage ........................................... >2001V
Latch-Up Current ..................................................... >200 mA



Description

The CY7C0430V is a 1-Mb synchronous true four-port Static RAM. CY7C0430V is a high-speed, low-power 3.3V CMOS dual-port static RAM. Four ports are provided, permitting independent, simultaneous access for reads from any location in memory. A particular port can write to a certain location while other ports are reading that location simultaneously. The result of writing to the same location by more than one port at the same time is undefined. Registers on control, address and data lines of CY7C0430V allow for minimal set-up and hold time.

Data is registered for decreased cycle time. Clock to data valid tCD2 = 4.7 ns. Each port contains a burst counter on the input address register. After externally loading the counter with the initial address the counter will self-increment the address internally (more details to follow). The internal write pulse width is independent of the duration of the R/W input signal. The internal write pulse of CY7C0430V is self-timed to allow the shortest possible cycle times.

A HIGH on CE0 or LOW on CE1 for one clock cycle will power down the internal circuitry to reduce the static power consumption. One cycle is required with chip enables asserted to reactivate the outputs.

Counter enable inputs are provided to stall the operation of the address input and utilize the internal address generated by the internal counter for fast interleaved memory applications. A port's burst counter is loaded with an external address when the port's Counter Load pin (CNTLD) is asserted LOW. When the port's Counter Increment pin (CNTINC) is asserted, the address counter will increment on each subsequent LOW-to- HIGH transition of that port's clock signal. This will read/write one word from/into each successive address location until CNTINC is deasserted. The counter can address the entire memory array and will loop back to the start. Counter Reset (CNTRST) is used to reset the burst counter. A counter-mask register is used to control the counter wrap. The counter and mask register operations are described in more details in the following sections.

The counter or mask register values of CY7C0430V can be read back on the bidirectional address lines by activating MKRD or CNTRD respectively.

The new features added to the QuadPort™ as compared to standard synchronous dual-ports include: readback of burst-counter internal address value on address lines, counter-mask registers to control the counter wrap-around, readback of mask register value on address lines, interrupt flags for message passing, BIST, JTAG for boundary scan, and asynchronous Master Reset.




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