CY7C09579V General Description
CY7C09579V Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ........................ 65°C to +150°C
Ambient Temperature with
Power Applied.....................................55°C to +125°C
Supply Voltage to Ground Potential .........0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State .....................0.5V to VDD+0.5V
DC Input Voltage............................0.5V to VDD+0.5V[4]
Output Current into Outputs (LOW) ............................. 20 mA
Static Discharge Voltage ........................................... >2001V
Latch-Up Current..................................................... >200 mA
CY7C09579V Features
• True dual-ported memory cells which allow simultaneous access of the same memory location
• Two Flow-Through/Pipelined devices
-16K x 36 organization (CY7C09569V)
-32K x 36 organization (CY7C09579V)
• 0.25-micron CMOS for optimum speed/power
• Three modes
-Flow-Through
-Pipelined
-Burst
• Bus-Matching Capabilities on Right Port (x36 to x18 or x9)
• Byte-Select Capabilities on Left Port
• 100-MHz Pipelined Operation
• High-speed clock to data access 5/6/8 ns
• 3.3V Low operating power
-Active = 250 mA (typical)
-Standby = 10 µA (typical)
• Fully synchronous interface for ease of use
• Burst counters increment addresses internally
-Shorten cycle times
-Minimize bus noise
-Supported in Flow-Through and Pipelined modes
• Counter Address Read Back via I/O lines
• Single Chip Enable
• Automatic power-down
• Commercial and Industrial Temperature Ranges
• Compact package
-144-Pin TQFP (20 x 20 x 1.4 mm)
-172-Ball BGA (1.0 mm pitch) (15 x 15 x .51 mm)
CY7C09579V Connection Diagram
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