Purchase CY7C1007BN, In-stock CY7C1007BN From SeekIC.
MFG:CYPRESS D/C:08+
Part Number: CY7C1007BN
MFG: CYPRESS
D/C: 08+
Description: The CY7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 b...
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CY7C1007BN
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DataSheet
General Description
CY7C1007BN General Description
The CY7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.
Writing to the devices is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).
Reading from the devices is accomplished by taking Chip Enable (CE) LOW while Write Enable (WE) remains HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the data output (DOUT) pin.
The output pin (DOUT) is placed in a high-impedance state when the device is deselected (CE HIGH) or during a write operation (CE and WE LOW).
The CY7C107BN is available in a standard 400-mil-wide SOJ; the CY7C1007BN is available in a standard 300-mil-wide SOJ
CY7C1007BN Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,not tested.)
Storage Temperature ..................................-65°C to +150°C
Ambient Temperature with
Power Applied..............................................-55°C to +125°C
Supply Voltage on VCC Relative to GND[1] ....... -0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ...................................... -0.5V to VCC + 0.5V
DC Input Voltage[1] ...................................-0.5V to VCC + 0.5V
Current into Outputs (LOW)........................................... 20 mA
Static Discharge Voltage.............................................. >2001V
(per MIL-STD-883, Method 3015).
Latch-Up Current........................................................>200 mA
Storage Temperature ..................................-65°C to +150°C
Ambient Temperature with
Power Applied..............................................-55°C to +125°C
Supply Voltage on VCC Relative to GND[1] ....... -0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ...................................... -0.5V to VCC + 0.5V
DC Input Voltage[1] ...................................-0.5V to VCC + 0.5V
Current into Outputs (LOW)........................................... 20 mA
Static Discharge Voltage.............................................. >2001V
(per MIL-STD-883, Method 3015).
Latch-Up Current........................................................>200 mA
CY7C1007BN Features
• High speed
- tAA = 15 ns
• CMOS for optimum speed/power
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
- tAA = 15 ns
• CMOS for optimum speed/power
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
CY7C1007BN Connection Diagram
CY7C1007BN-15VC
PDF/DataSheet Download
- Datasheet: CY7C1007BN-15VC
- File Size: 317688 KB
- Manufacturer: CYPRESS [Cypress Semiconductor]
- Click here to Download
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CY7C1007BN Relative Products
CY7C1007B
The CY7C107B and CY7C1007B are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. These devices have an automatic power-down feature that reduc...
CY7C1007
The CY7C107 and CY7C1007 are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. These devices have an automatic power-down feature that reduces...
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