CY7C1016

The CY7C1016 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers. The device has an automatic power-down feature that significantly reduces power consumption when deselected.

Writing to the device is accomplished by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3) is then written into the location specified on the address pins (A₀ through A17).

Reading from the device is accomplished by taking chip enable (CE) LOW while forcing write enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the four I/O pins.

The four input/output pins (I/O₀ through I/O₃) are placed in a high-impedance state when the device is deselected (CE HIGH), or during a write operation (CE and WE LOW). The CY7C1016 is available in standard 400-mil-wide SOJs.