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MFG:CYPRESS D/C:08+
Part Number: CY7C1019BN
MFG: CYPRESS
D/C: 08+
Description: The CY7C1019BN is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory...
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CY7C1019BN
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DataSheet
General Description
CY7C1019BN General Description
The CY7C1019BN is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW).
The CY7C1019BN is available in standard 32-pin TSOP Type II and 400-mil-wide SOJ packages.
CY7C1019BN Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature ..............................65°C to +150°C
Ambient Temperature with
Power Applied..........................................55°C to +125°C
Supply Voltage on VCC to Relative GND[1] .... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ...................................0.5V to VCC + 0.5V
DC Input Voltage[1]................................0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA
not tested.)
Storage Temperature ..............................65°C to +150°C
Ambient Temperature with
Power Applied..........................................55°C to +125°C
Supply Voltage on VCC to Relative GND[1] .... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ...................................0.5V to VCC + 0.5V
DC Input Voltage[1]................................0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA
CY7C1019BN Features
• High speed
- tAA = 12, 15 ns
• CMOS for optimum speed/power
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion with CE and OE options
• Functionally equivalent to CY7C1019
- tAA = 12, 15 ns
• CMOS for optimum speed/power
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion with CE and OE options
• Functionally equivalent to CY7C1019
CY7C1019BN Connection Diagram
CY7C1019BN-12VC
PDF/DataSheet Download
- Datasheet: CY7C1019BN-12VC
- File Size: 423340 KB
- Manufacturer: CYPRESS [Cypress Semiconductor]
- Click here to Download
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The CY7C1019B/10191B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic powe...
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