CY7C1019BV33

The CY7C1019BV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE</a>), an active LOW Output Enable (OE</a>), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected. 

Writing to the device is accomplished by taking Chip Enable (CE</a>) and Write Enable (WE</a>) inputs LOW. Data on the eight I/O pins (I/O₀ through I/O₇) is then written into the location speci-fied on the address pins (A₀ through A₁₆).

Reading from the device is accomplished by taking Chip Enable (CE</a>) and Output Enable (OE</a>) LOW while forcing Write Enable (WE</a>) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The eight input/output pins (I/O₀ through I/O₇) are placed in a high-impedance state when the device is deselected (CE</a>HIGH), the outputs are disabled (OE</a> HIGH), or during a write operation (CE</a> LOW, and WE</a> LOW).

The CY7C1019BV33 is available in a standard 400-mil-wide package.