CY7C1019BV33

Features: •High speed-tAA= 10 ns •CMOS for optimum speed/power•Center power/ground pinout•Automatic power-down when deselected•Easy memory expansion with CE</a>and OE</a>options•Functionally equivalent to CY7C1019V33PinoutSpecifications(Above which t...

product image

CY7C1019BV33 Picture
SeekIC No. : 004319745 Detail

CY7C1019BV33: Features: •High speed-tAA= 10 ns •CMOS for optimum speed/power•Center power/ground pinout•Automatic power-down when deselected•Easy memory expansion with CE</a>an...

floor Price/Ceiling Price

Part Number:
CY7C1019BV33
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/6

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

•High speed
-tAA = 10 ns
•CMOS for optimum speed/power
•Center power/ground pinout
•Automatic power-down when deselected
•Easy memory expansion with CE</a> and OE</a> options
•Functionally equivalent to CY7C1019V33



Pinout

  Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guide-lines, not tested.)
Storage Temperature .............................65°C to +150°C
Ambient Temperature with
Power Applied.........................................55°C to +125°C
Supply Voltage on VCC to Relative GND[1]....0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1]..................................0.5V to VCC + 0.5V
DC Input Voltage[1]..............................0.5V to VCC + 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA



Description

The CY7C1019BV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE</a>), an active LOW Output Enable (OE</a>), and three-state drivers. CY7C1019BV33 has an automatic power-down feature that significantly reduces power consumption when deselected. 

Writing to CY7C1019BV33 is accomplished by taking Chip Enable (CE</a>) and Write Enable (WE</a>) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location speci-fied on the address pins (A0 through A16).

Reading from the device is accomplished by taking Chip Enable (CE</a>) and Output Enable (OE</a>) LOW while forcing Write Enable (WE</a>) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when CY7C1019BV33 is deselected (CE</a>HIGH), the outputs are disabled (OE</a> HIGH), or during a write operation (CE</a> LOW, and WE</a> LOW).

The CY7C1019BV33 is available in a standard 400-mil-wide package.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Prototyping Products
DE1
Batteries, Chargers, Holders
Inductors, Coils, Chokes
Motors, Solenoids, Driver Boards/Modules
Programmers, Development Systems
View more