CY7C1021B-12VC

IC SRAM 1MBIT 12NS 44SOJ

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SeekIC No. : 003552732 Detail

CY7C1021B-12VC: IC SRAM 1MBIT 12NS 44SOJ

floor Price/Ceiling Price

Part Number:
CY7C1021B-12VC
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: - Manufacturer: Cypress Semiconductor Corp
Format - Memory: RAM Memory Type: SRAM - Asynchronous
Memory Size: 1M (64K x 16) Speed: 12ns
THD plus Noise : 1.5 %, 0.4 % Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C
Package / Case: 44-BSOJ Supplier Device Package: 44-SOJ    

Description

Series: -
Voltage - Supply: 4.5 V ~ 5.5 V
Packaging: Tube
Operating Temperature: 0°C ~ 70°C
Format - Memory: RAM
Interface: Parallel
Memory Type: SRAM - Asynchronous
Memory Size: 1M (64K x 16)
Speed: 12ns
Package / Case: 44-BSOJ
Supplier Device Package: 44-SOJ
Manufacturer: Cypress Semiconductor Corp


Description

The CY7C1021B-12VC is a high-speed CMOS static RAM organized as 65536 words by 16 bits. The features of CY7C0241AV-20AC can be summarized as (1)temperature range: commercial: 0 to 70, industral: -40 to 85. automotive: -40 to 125; (2)high speed: tAA=10ns; (3)CMOS for optimum speed/power; (4)low active power: 825mW; (5)automatic power-down when deselected; (6)independent control of upper and lower bits; (7)available in 44-pin TSOP and 400-mil SOJ; (8)also available in lead-free 44-pin TSOP.

The absolute maximum ratings of the CY7C1021B-12VC are: (1)storage temperature: -65 to +150; (2)ambient temperature with power applied: -55 to +125; (3)supply voltage to ground potential: -0.5V to +7.0V; (4)DC voltage applied to outputs in high Z state: -0.5V to VCC+0.5V; (5)DC input voltage: -0.5V to VCC+0.5V; (6)current into outputs: 20mA.

The following is about the electrical characteristics of CY7C1021B-12VC: (1)output high voltage: 2.4V min at VCC=min, IOH=-4.0mA; (2)output low voltage: 0.4V max at VCC=min, IOH=8.0mA; (3)input high level: 2.2V min; (4)input low level: 0.8V max; (5)input load current: -1A min and +1A  max at GNDVIVCC; (6)output leakage current: -1A min and +1A max at GNDVINVCC, output disabled; (7)output short circuit current: -300mA at VCC=max, VOUT=GND; (8)VCC operating supply current: 150mA.max at VCC=max, IOUT=0mA, output disable; (8)standby current: 35mA max.




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