CY7C1041DV33-10ZSXI

SRAM 4M FAST ASYNC HI SPD IND

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SeekIC No. : 00470972 Detail

CY7C1041DV33-10ZSXI: SRAM 4M FAST ASYNC HI SPD IND

floor Price/Ceiling Price

US $ 2.11~3.37 / Piece | Get Latest Price
Part Number:
CY7C1041DV33-10ZSXI
Mfg:
Cypress Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~50
  • 50~100
  • Unit Price
  • $3.37
  • $2.3
  • $2.22
  • $2.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2021/7/24

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Product Details

Quick Details

Memory Size : 4 Mbit Organization : 256 K x 16
Access Time : 10 ns Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 3 V Maximum Operating Current : 10 mA
Maximum Operating Temperature : + 85 C Minimum Operating Temperature : - 40 C
Mounting Style : SMD/SMT Package / Case : TSOP-44
Packaging : Tray    

Description

Packaging : Tray
Mounting Style : SMD/SMT
Access Time : 10 ns
Organization : 256 K x 16
Supply Voltage - Max : 3.6 V
Maximum Operating Temperature : + 85 C
Package / Case : TSOP-44
Memory Size : 4 Mbit
Minimum Operating Temperature : - 40 C
Supply Voltage - Min : 3 V
Maximum Operating Current : 10 mA


Description

The CY7C1041DV33-10ZSXI is designed as one kind of 4-Mbit (256K x 16) Static RAM that is available in standard 400-mil-wide 36-pin SOJ package and 44-pin TSOP II package with center power and ground (revolutionary) pinout. Features of CY7C1041DV33-10ZSXI are:(1)Automatic power-down when deselected;(2)TTL-compatible inputs and outputs;(3)Easy memory expansion with CE and OE features;(4)Pin- and function-compatible with CY7C1049CV33;(5)Available in Lead-Free 44-lead (400-mil) Molded SOJ and 44-pin TSOP II packages.

The absolute maximum ratings of the CY7C1041DV33-10ZSXI can be summarized as:(1)Storage Temperature: -65°C to +150°C;(2)Ambient Temperature with Power Applied: -55°C to +125°C;(3)Supply Voltage on VCC to Relative GND:0.3V to +4.6V;(4)DC Voltage Applied to Outputs in High-Z State: -0.3V to VCC + 0.3V;(5)DC Input Voltage: -0.3V to VCC + 0.3V;(6)Current into Outputs (LOW): 20 mA;(7)Static Discharge Voltage: >2001 V;(8)Latch-up Current: >200 mA.

The electrical characteristics of the CY7C1041DV33-10ZSXI can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VCC + 0.3 V;(4)Input LOW Voltage:0.3 to 0.8 V;(5)Input Leakage Current:1 to +1 A. If you want to know more information such as the electrical characteristics about CY7C1041DV33-10ZSXI, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationCY7C1041DV33-10ZSXI
VendorCypress Semiconductor Corp
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM - Asynchronous
Memory Size4M (256K x 16)
Speed10ns
InterfaceParallel
Package / Case44-TSOP II
PackagingTray
Voltage - Supply3 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryRAM
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names CY7C1041DV33 10ZSXI
CY7C1041DV3310ZSXI
428 1921 ND
4281921ND
428-1921



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