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Part Number: CY7C1046
Description: The CY7C1046 is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Easy memory...
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CY7C1046
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DataSheet
General Description
CY7C1046 General Description
The CY7C1046 is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the fourI/O pins (I/O0 through I/O3) is then written into the location specified on the address pins (A0 through A19).
Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.
The four input/output pins (I/O0 through I/O3) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW).
The CY7C1046 is available in a standard 400-mil-wide 32-pin SOJ package with center power and ground (revolutionary) pinout.
CY7C1046 Maximum Ratings
Storage Temperature ............................. 65°C to +150°C
Ambient Temperature with
Power Applied......................................... 55°C to +125°C
Supply Voltage on VCC to Relative GND[1] ... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ..................................0.5V to VCC + 0.5V
DC Input Voltage[1]...............................0.5V to VCC + 0.5V
Current into Outputs (LOW)........................................ 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Ambient Temperature with
Power Applied......................................... 55°C to +125°C
Supply Voltage on VCC to Relative GND[1] ... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ..................................0.5V to VCC + 0.5V
DC Input Voltage[1]...............................0.5V to VCC + 0.5V
Current into Outputs (LOW)........................................ 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
CY7C1046 Features
• High speed
-tAA = 10 ns
• Low active power
-1018 mW (max.)
• Low CMOS standby power(L version)
-2.75 mW (max.)
• 2.0V Data Retention (400 µW at 2.0V retention)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
-tAA = 10 ns
• Low active power
-1018 mW (max.)
• Low CMOS standby power(L version)
-2.75 mW (max.)
• 2.0V Data Retention (400 µW at 2.0V retention)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
CY7C1046 Connection Diagram
CY7C1046
PDF/DataSheet Download
- Datasheet: CY7C1046
- File Size: 132261 KB
- Manufacturer: Cypress
- Click here to Download
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- TI [Texas Instruments]
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- TI [Texas Instruments]
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CY7C1046 Relative Products
CY7C1041V33
The CY7C1041V33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits.Writing to CY7C1041V33 is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 thr...
CY7C1041DV33-10ZSXIT
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CY7C1041DV33-10ZSXI
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