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Part Number: CY7C1069BV33

 

 

 

 

Description: The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing...


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CY7C1069BV33 General Description


The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE LOW) and Write Enable (WE) inputs LOW.

Reading from the device is accomplished by enabling the chip (CE LOW) as well as forcing the Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. See the truth table at the back of this data sheet for a complete description of Read and Write modes.

The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a Write operation (CE LOW and WE LOW).

The CY7C1069BV33 is available in a 54-pin TSOP II package with center power and ground (revolutionary) pinout.

CY7C1069BV33 Maximum Ratings

(Above which the useful life may be impaired. For user guidelines,not tested.)
Storage Temperature ..............................65°C to +150°C
Ambient Temperature with
Power Applied.........................................55°C to +125°C
Supply Voltage on VCC to Relative GND[3] ....0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State[3] .................................0.5V to VCC + 0.5V
DC Input Voltage[3] ............................. 0.5V to VCC + 0.5V
Current into Outputs (LOW).........................................20 mA

CY7C1069BV33 Features

• High speed
    - tAA = 8, 10, 12 ns
• Low active power
    - 1080 mW (max.)
• Operating voltages of 3.3 ± 0.3V
• 2.0V data retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs

CY7C1069BV33 Connection Diagram

CY7C1069BV33  Connection Diagram

CY7C1069BV33 datasheet

CY7C1069BV33
PDF/DataSheet Download

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