CY7C1307BV25

The CY7C1305BV25/CY7C1307BV25 are 2.5V Synchronous Pipelined SRAMs equipped with QDR architecture. QDR architecture consists of two  separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write Port has dedicated Data Inputs to support Write operations. QDR architecture has separate data inputs and data outputs to completely eliminate the need to "turn-around" the data bus required with common I/O devices. Access to each port is accomplished through a common address bus. Addresses for Read and Write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the CY7C1305BV25/CY7C1307BV25's Read and Write ports are completely independent of one another. In order to maximize data throughput, both Read and Write ports are equipped with Double Data Rate (DDR) interfaces. Each address location is associated with four 18-bit words (CY7C1305BV25) and four 36-bit words (CY7C1307BV25) that burst sequentially into or out of the device. Since data of CY7C1305BV25/CY7C1307BV25 can be transferred into and out of the CY7C1305BV25/CY7C1307BV25 on every rising edge of both input clocks (K/K and C/C) memory bandwidth is maximized while simplifying system design by eliminating bus "turn-arounds."

Depth expansion of CY7C1305BV25/CY7C1307BV25 is accomplished with Port Selects for each port. Port selects allow each port to operate independently.

All synchronous inputs of CY7C1305BV25/CY7C1307BV25 pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers CY7C1305BV25/CY7C1307BV25 controlled by the C or C input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.