CY7C1310AV18

Features: •Separate independent Read and Write data ports-Supports concurrent transactions•167-MHz clock for high bandwidth•2-Word Burst on all accesses•Double Data Rate (DDR) interfaces on both Read and Write ports (data transferred at 333 MHz) @ 167MHz •Two input cl...

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SeekIC No. : 004319890 Detail

CY7C1310AV18: Features: •Separate independent Read and Write data ports-Supports concurrent transactions•167-MHz clock for high bandwidth•2-Word Burst on all accesses•Double Data Rate (DDR...

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Part Number:
CY7C1310AV18
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

•Separate independent Read and Write data ports-Supports concurrent transactions
•167-MHz clock for high bandwidth
•2-Word Burst on all accesses
•Double Data Rate (DDR) interfaces on both Read and Write ports (data transferred at 333 MHz) @ 167MHz
•Two input clocks (K and K) for precise DDR timing-SRAM uses rising edges only
•Two output clocks (C and C) account for clock skew and flight time mismatching
•Echo clocks (CQ and CQ) simplify data capture in high speed systems
•Single multiplexed address input bus latches address inputs for both Read and Write ports
•Separate Port Selects for depth expansion
•Synchronous internally self-timed writes
•Available in x8, x18, and x36 configurations
•Full data coherancy , providing most current data
•Core Vdd=1.8V(+/-0.1V);I/O Vddq=1.4V to Vdd
•13 x 15 x 1.4 mm 1.0-mm pitch FBGA package, 165 ball (11x15 matrix)
•Variable drive HSTL output buffers
•JTAG 1149.1 compatible test access port



Specifications

Pin Name I/O Pin Description
VREF Input-Reference Reference Voltage Input
. Static input used to set the reference level for HSTL inputs
and Outputs as well as AC measurement points.
VDD Power Supply Power supply inputs to the core of the device
VSS Ground Ground for the device
VDDQ Power Supply Power supply inputs for the outputs of the device



Description

The CY7C1310AV18/CY7C1312AV18/CY7C1314AV18 are1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separateports to access the memory array. The Read port hasdedicated Data Outputs to support Read operations and the Write Port has dedicated Data Inputs to support Write opera-tions. QDR-II architecture has separate data inputs and dataoutputs of CY7C1310AV18/CY7C1312AV18/CY7C1314AV18 to completely eliminate the need to "turn-around" thedata bus required with common I/O devices. Access to eachport is accomplished through a common address bus. TheRead address is latched on the rising edge of the K clock andthe Write address is latched on the rising edge of the K clock.

Accesses to the QDR-II Read and Write ports CY7C1310AV18/CY7C1312AV18/CY7C1314AV18 are completelyindependent of one another. In order to maximize datathroughput, both Read and Write ports are equipped with Double Data Rate (DDR) interfaces. Each addresslocation isassociated with two 8-bit words (CY7C1310AV18) or 18-bitwords (CY7C1312AV18) or 36-bit words (CY7C1314AV18)that burst sequentially into or out of the device. Since data canbe transferred into and out of the CY7C1310AV18/CY7C1312AV18/CY7C1314AV18 on every rising edgeof both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminatingbus "turn-arounds."Depth expansion is accomplished with Port Selects for eachport. Port selects allow each port to operate independently.All synchronous inputs pass through input registers controlledby the K or K input clocks. All data outputs of CY7C1310AV18/CY7C1312AV18/CY7C1314AV18 pass through outputregisters controlled by the C or C (or K or K in a single clockdomain) input clocks. Writes are conducted with on-chip 




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