SRAM 1Mx18 1.8V COM QDR II SRAM
CY7C1312BV18-200BZC: SRAM 1Mx18 1.8V COM QDR II SRAM
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| Memory Size : | 18 Mbit | Access Time : | 0.45 ns |
| Supply Voltage - Max : | 1.9 V | Supply Voltage - Min : | 1.7 V |
| Maximum Operating Current : | 550 mA | Maximum Operating Temperature : | + 70 C |
| Minimum Operating Temperature : | 0 C | Mounting Style : | SMD/SMT |
| Package / Case : | FBGA |
The CY7C1021B-12VC is 1.8V sychronous pipelined SRAMs, equipped with QDR architecture. The features of CY7C0241AV-20AC can be summarized as (1)separate independent read and write data ports; (2)200MHz clock for high bandwidth; (3)2 word burst on all accesses; (4)double data rate interfaces on both read and write ports @ 200MHz; (5)two input clocks for precise DDR timing; (6)two output clock accounts for clock skew and flight time mismatching.
The absolute maximum ratings of the CY7C1021B-12VC are: (1)storage temperature: -65 to +150; (2)ambient temperature with power applied: -10 to +85; (3)supply voltage to ground potential: -0.5V to +2.9V; (4)DC voltage applied to outputs in high Z state: -0.5V to VDDQ+0.3V; (5)DC input voltage: -0.5V to VDDQ+0.3V.
The following is about the electrical characteristics of CY7C1021B-12VC: (1)power supply voltage: 1.7V min, 1.8V typical and 1.9V max; (2)I/O supply voltage: 1.4V min, 1.5V typical and VDD max; (3)output high voltage: VDDQ/2-0.12V min and VDDQ/2+0.12V max; (4)output low voltage: VDDQ/2-0.12V min and VDDQ/2+0.12V max; (5)output high voltage: VDDQ-0.2V min and VDDQ max at IOH=-0.1mA, nominal impedance; (6)output low voltage: VSS min and 0.2V max at IOH=0.1mA, nominal impedance; (7)input high voltage: VREF+0.1V min and VDDQ+0.3V max; (8)input low voltage: -0.3V min and VREF-0.1V max; (9)input load current: -5A min and +5A max at GNDVIVDDQ; (10)output leakage current: -5A min and +5A max at GNDVINVDDQ, output disabled.
| Technical/Catalog Information | CY7C1312BV18-200BZC |
| Vendor | Cypress Semiconductor Corp |
| Category | Integrated Circuits (ICs) |
| Memory Type | SRAM - Synchronous |
| Memory Size | 18M (1M x 18) |
| Speed | 200MHz |
| Interface | Parallel |
| Package / Case | 165-FBGA |
| Packaging | Tray |
| Voltage - Supply | 1.7 V ~ 1.9 V |
| Operating Temperature | 0°C ~ 70°C |
| Format - Memory | RAM |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | CY7C1312BV18 200BZC CY7C1312BV18200BZC |