CY7C1312BV18-200BZC

SRAM 1Mx18 1.8V COM QDR II SRAM

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SeekIC No. : 00475056 Detail

CY7C1312BV18-200BZC: SRAM 1Mx18 1.8V COM QDR II SRAM

floor Price/Ceiling Price

Part Number:
CY7C1312BV18-200BZC
Mfg:
Cypress Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Memory Size : 18 Mbit Access Time : 0.45 ns
Supply Voltage - Max : 1.9 V Supply Voltage - Min : 1.7 V
Maximum Operating Current : 550 mA Maximum Operating Temperature : + 70 C
Minimum Operating Temperature : 0 C Mounting Style : SMD/SMT
Package / Case : FBGA    

Description

Organization :
Packaging :
Mounting Style : SMD/SMT
Access Time : 0.45 ns
Supply Voltage - Max : 1.9 V
Supply Voltage - Min : 1.7 V
Maximum Operating Temperature : + 70 C
Minimum Operating Temperature : 0 C
Memory Size : 18 Mbit
Maximum Operating Current : 550 mA
Package / Case : FBGA


Description

The CY7C1021B-12VC is 1.8V sychronous pipelined SRAMs, equipped with QDR architecture. The features of CY7C0241AV-20AC can be summarized as (1)separate independent read and write data ports; (2)200MHz clock for high bandwidth; (3)2 word burst on all accesses; (4)double data rate interfaces on both read and write ports @ 200MHz; (5)two input clocks for precise DDR timing; (6)two output clock accounts for clock skew and flight time mismatching.

The absolute maximum ratings of the CY7C1021B-12VC are: (1)storage temperature: -65 to +150; (2)ambient temperature with power applied: -10 to +85; (3)supply voltage to ground potential: -0.5V to +2.9V; (4)DC voltage applied to outputs in high Z state: -0.5V to VDDQ+0.3V; (5)DC input voltage: -0.5V to VDDQ+0.3V.

The following is about the electrical characteristics of CY7C1021B-12VC: (1)power supply voltage: 1.7V min, 1.8V typical and 1.9V max; (2)I/O supply voltage: 1.4V min, 1.5V typical and VDD max; (3)output high voltage: VDDQ/2-0.12V min and VDDQ/2+0.12V max; (4)output low voltage: VDDQ/2-0.12V min and VDDQ/2+0.12V max; (5)output high voltage: VDDQ-0.2V min and VDDQ max at IOH=-0.1mA, nominal impedance; (6)output low voltage: VSS min and 0.2V max at IOH=0.1mA, nominal impedance; (7)input high voltage: VREF+0.1V min and VDDQ+0.3V max; (8)input low voltage: -0.3V min and VREF-0.1V max; (9)input load current: -5A min and +5A  max at GNDVIVDDQ; (10)output leakage current: -5A min and +5A max at GNDVINVDDQ, output disabled.




Parameters:

Technical/Catalog InformationCY7C1312BV18-200BZC
VendorCypress Semiconductor Corp
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM - Synchronous
Memory Size18M (1M x 18)
Speed200MHz
InterfaceParallel
Package / Case165-FBGA
PackagingTray
Voltage - Supply1.7 V ~ 1.9 V
Operating Temperature0°C ~ 70°C
Format - MemoryRAM
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names CY7C1312BV18 200BZC
CY7C1312BV18200BZC



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