CY7C1333

Features: • Pin compatible and functionally equivalent to ZBT™ device MT55L64L32F• Supports 66-MHz bus operations with zero wait states -Data is transferred on every clock• Internally self-timed output buffer control to eliminate the need to use OE• Registered inputs ...

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CY7C1333 Picture
SeekIC No. : 004319939 Detail

CY7C1333: Features: • Pin compatible and functionally equivalent to ZBT™ device MT55L64L32F• Supports 66-MHz bus operations with zero wait states -Data is transferred on every clock• I...

floor Price/Ceiling Price

Part Number:
CY7C1333
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Pin compatible and functionally equivalent to ZBT™ device MT55L64L32F
• Supports 66-MHz bus operations with zero wait states
   -Data is transferred on every clock
• Internally self-timed output buffer control to eliminate the need to use OE
• Registered inputs for Flow-Through operation
• Byte Write capability
• 64K x 32 common I/O architecture
• Single 3.3V power supply
• Fast clock-to-output times
   -12.0 ns (for 66-MHz device)
   -14.0 ns (for 50-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous output enable
• JEDEC-standard 100-pin TQFP package
• Burst Capability-linear or interleaved burst order
• Low (16.5 mW) standby power



Pinout

  Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ........................... −65°C to +150°C
Ambient Temperature with
Power Applied........................................ −55°C to +125°C
Supply Voltage on VDD Relative to GND.........−0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[9] ................................−0.5V to VDDQ + 0.5V
DC Input Voltage[9].............................−0.5V to VDDQ + 0.5V
Current into Outputs (LOW)........................................ 20 mA
Static Discharge Voltage .......................................... >2001V
per MIL-STD-883, Method 3015)
Latch-Up Current....................................................   >200 mA



Description

The CY7C1333 is a 3.3V, 64K by 32 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1333 is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions. The CY7C1333 is pin/functionally compatible to ZBT SRAM MT55L64L32F.

All synchronous inputs of CY7C1333 pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which, when deasserted, suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 12.0 ns (66-MHz device).

Write operations of CY7C1333 are controlled by the four Byte Write Select (BWS[0:3]) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE1, CE2, CE3) CY7C1333 and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers of CY7C1333 are synchronously three-stated during the data portion of a write sequence.




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