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MFG:N/A  Package Cooled:QFP  D/C:08+  

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Part Number: CY7C1350

 

MFG: N/A

Package Cooled: QFP

D/C: 08+

Description: The CY7C1350 is a 3.3V, 128K by 36 synchronous-pipelined Burst SRAM designed specifically to support u...


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CY7C1350 General Description


The CY7C1350 is a 3.3V, 128K by 36 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1350 is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of the SRAM, especially in systems that require frequent Write/Read transitions. The CY7C1350 is pin/functionally compatible to ZBT™ SRAMs IDT71V546, MT55L128L36P, and MCM63Z736.

All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 4.0 ns (143-MHz device).

Write operations are controlled by the four Byte Write Select (BWS[3:0]) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence.

CY7C1350 Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on VDD Relative to GND.........−0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[9] .....................................−0.5V to VDDQ + 0.5V
DC Input Voltage[9]..................................−0.5V to VDDQ + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA

CY7C1350 Features

• Pin compatible and functionally equivalent to ZBT™ devices IDT71V546, MT55L128L36P, and MCM63Z736
• Supports 143-MHz bus operations with zero wait states
   -Data is transferred on every clock
• Internally self-timed output buffer control to eliminate the need to use OE
• Fully registered (inputs and outputs) for pipelined operation
• Byte Write capability
• 128K x 36 common I/O architecture
• Single 3.3V power supply
• Fast clock-to-output times
   -4.0 ns (for 143-MHz device)
   -4.2 ns (for 133-MHz device)
   -5.0 ns (for 100-MHz device)
   -7.0 ns (for 80-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous output enable
• JEDEC-standard 100 TQFP package
• Burst Capability - linear or interleaved burst order
• Low standby power (17.325 mW max.)

CY7C1350 Connection Diagram

CY7C1350  Connection Diagram

CY7C1350 datasheet

CY7C1350
PDF/DataSheet Download

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