Purchase CY7C1382CV25, In-stock CY7C1382CV25 From SeekIC.
Part Number: CY7C1382CV25
Description: The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysi...
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CY7C1382CV25
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DataSheet
General Description
CY7C1382CV25 General Description
The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.
CY7C1382CV25 Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................55°C to +1500C
Ambient Temperature with
Power Applied.............................................55°Cto +125°C
Supply Voltage on VDD
Relative to GND.................................................0.3V to +3.6V
DC Voltage Applied to Outputs
in High Z State[11]..................................0.5V to VDDQ + 0.5V
DC Input Voltage[11]..............................0.5V to VDDQ + 0.5V
Current into Outputs (LOW).............................................20 mA
lines, not tested.)
Storage Temperature .................................55°C to +1500C
Ambient Temperature with
Power Applied.............................................55°Cto +125°C
Supply Voltage on VDD
Relative to GND.................................................0.3V to +3.6V
DC Voltage Applied to Outputs
in High Z State[11]..................................0.5V to VDDQ + 0.5V
DC Input Voltage[11]..............................0.5V to VDDQ + 0.5V
Current into Outputs (LOW).............................................20 mA
CY7C1382CV25 Features
•Fast clock speed: 250, 225, 200, 167 MHz
•Provide high-performance 3-1-1-1 access rate
•Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns
•Optimal for depth expansion
•Single 2.5V ±5% power supply
•Common data inputs and data outputs
•Byte Write Enable and Global Write control
•Chip enable for address pipeline
•Address, data, and control registers
•Internally self-timed Write cycle
•Burst control pins (interleaved or linear burst sequence)
•Automatic power-down available using ZZ mode or CE deselect
•Available in 119-ball bump BGA, 165-ball FBGA and 100-pin TQFP packages
•JTAG boundary scan for BGA packaging version
•Provide high-performance 3-1-1-1 access rate
•Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns
•Optimal for depth expansion
•Single 2.5V ±5% power supply
•Common data inputs and data outputs
•Byte Write Enable and Global Write control
•Chip enable for address pipeline
•Address, data, and control registers
•Internally self-timed Write cycle
•Burst control pins (interleaved or linear burst sequence)
•Automatic power-down available using ZZ mode or CE deselect
•Available in 119-ball bump BGA, 165-ball FBGA and 100-pin TQFP packages
•JTAG boundary scan for BGA packaging version
CY7C1382CV25 Connection Diagram
CY7C1382CV25-167AC
PDF/DataSheet Download
- Datasheet: CY7C1382CV25-167AC
- File Size: 532140 KB
- Manufacturer: CYPRESS [Cypress Semiconductor]
- Click here to Download
- ·CY700SMS
- POWER-ONE [Power-One]
- 12 WATT
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- CYPRESS [Cypress Semiconductor]
- 1-of-8 Decoder
- 159631 KB
- ·CY74FCT138ATQC
- CYPRESS [Cypress Semiconductor]
- 1-of-8 Decoder
- 159631 KB
- ·CY74FCT138ATQCT
- TI [Texas Instruments]
- 1-of-8 Decoder
- 110463 KB
- ·CY74FCT138ATSOC
- CYPRESS [Cypress Semiconductor]
- 1-of-8 Decoder
- 110463 KB
- ·CY74FCT138ATSOCT
- TI [Texas Instruments]
- 1-of-8 Decoder
- 110463 KB
- ·CY74FCT138CTQC
- CYPRESS [Cypress Semiconductor]
- 1-of-8 Decoder
- 159631 KB
- ·CY74FCT138CTQCT
- TI [Texas Instruments]
- 1-of-8 Decoder
- 110463 KB
CY7C1382CV25 Relative Products
CY7C1382C
CY7C1382BV25
The Cypress Synchronous Burst SRAM CY7C1382BV25 and CY7C1380BV25 family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.The CY7C1382BV25 and CY7C1...
CY7C1382B
The Cypress Synchronous Burst SRAM CY7C1380B and CY7C1382Bfamily employs high-speed, low-power CMOS designs using advanced single- layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.The CY7C1380B and CY7C1382B SRAM...
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